A digital mammography system based on a GaAs pixel detector has been developed by the INFN (Istituto Nazionale di Fisica Nucleare) collaboration MED46. The high atomic number makes the GaAs a very efficient material for low energy X-ray detection (10-30 keV is the typical energy range used in mammography). Low contrast details can be detected with a significant dose reduction to the patient. The system presented in this paper consists of a 4096 pixel matrix built on a 200 μm thick semi-insulating GaAs substrate. The pixel size is 170×170 μm2for a total active area of 1.18 cm2. The detector is bump-bonded to a VLSI front-end chip which implements a single-photon counting architecture. This feature allows to enhance the radiographic contrast detection with respect to charge integrating devices. The system has been tested by using a standard mammographic tube. Images of mammographic phantoms will be presented and compared with radiographs obtained with traditional film/screen systems. Monte Carlo simulations have been also performed to evaluate the imaging capability of the system. Comparison with simulations and experimental results will be shown.

Low contrast imaging with a GaAs pixel digital detector / Amendolia, Salvator Roberto; Bisogni, Maria Giuseppina; Bottigli, Ubaldo; Delogu, Pasquale; Dipasquale, Giovanna; Faucci Giannelli, Michele; Maestro, Paolo; Pernigotti, Elena; Rosso, Valeria; Stumbo, Simone; Ciocci, Maria Agnese; Fantacci, Maria Evelina; Marzulli, Vincenzo M.; Stefanini, Arnaldo. - In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE. - ISSN 0018-9499. - 47:4(2000), pp. 1478-1482. [10.1109/23.873000]

Low contrast imaging with a GaAs pixel digital detector

Amendolia, Salvator Roberto;Bottigli, Ubaldo;Stumbo, Simone;
2000-01-01

Abstract

A digital mammography system based on a GaAs pixel detector has been developed by the INFN (Istituto Nazionale di Fisica Nucleare) collaboration MED46. The high atomic number makes the GaAs a very efficient material for low energy X-ray detection (10-30 keV is the typical energy range used in mammography). Low contrast details can be detected with a significant dose reduction to the patient. The system presented in this paper consists of a 4096 pixel matrix built on a 200 μm thick semi-insulating GaAs substrate. The pixel size is 170×170 μm2for a total active area of 1.18 cm2. The detector is bump-bonded to a VLSI front-end chip which implements a single-photon counting architecture. This feature allows to enhance the radiographic contrast detection with respect to charge integrating devices. The system has been tested by using a standard mammographic tube. Images of mammographic phantoms will be presented and compared with radiographs obtained with traditional film/screen systems. Monte Carlo simulations have been also performed to evaluate the imaging capability of the system. Comparison with simulations and experimental results will be shown.
2000
Inglese
47
4
1478
1482
Monte Carlo methods; mammography; semiconductor counters
Amendolia, Salvator Roberto; Bisogni, Maria Giuseppina; Bottigli, Ubaldo; Delogu, Pasquale; Dipasquale, Giovanna; Faucci Giannelli, Michele; Maestro, ...espandi
Low contrast imaging with a GaAs pixel digital detector / Amendolia, Salvator Roberto; Bisogni, Maria Giuseppina; Bottigli, Ubaldo; Delogu, Pasquale; Dipasquale, Giovanna; Faucci Giannelli, Michele; Maestro, Paolo; Pernigotti, Elena; Rosso, Valeria; Stumbo, Simone; Ciocci, Maria Agnese; Fantacci, Maria Evelina; Marzulli, Vincenzo M.; Stefanini, Arnaldo. - In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE. - ISSN 0018-9499. - 47:4(2000), pp. 1478-1482. [10.1109/23.873000]
info:eu-repo/semantics/article
1 Contributo su Rivista::1.1 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11388/262840
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